FGH15T120SMD Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 1200 V, 15 A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Collector Current
1000
100
t_d(off)
t_f
10 _{Common Emitter}
V_GE = 15V, R_G = 34Ω
T_C = 25^oC
T_C = 175^oC
1
0
6
12
18
24
30
Collector Current, I_C [A]
Figure 15. Load Current vs. Frequency
150
V_CE = 600V
Load current : peak of square Wave
Duty cycle : 50%
100
T = 100^oC
c
Power Dissipation =167 W
50
T_C = 100^oC
0
1k
10k
100k
1M
Switching Frequency, f [Hz]
Figure 17. Forward Characteristics
300
100
T_C = 175^oC
10
T_C = 25^oC
1
0.1
0
1
2
3
4
5
Forward Voltage, V_F [V]
Figure 14. Swithcing Loss vs.
Collector Current
10
Common Emitter
V_GE = 15V, R_G = 34Ω
T_C = 25^oC
E_on
T_C = 175^oC
1
E_off
0.1
0
6
12
18
24
30
Collector Current, I_C [A]
Figure 16. SOA Characteristics
200
100
I MAX(Pulse)
C
10μs
10
I MAX(Continuous)
C
100μs
1ms
DC Operation _10ms
1
0.1
0.01
1
Single Nonrepetitive
Pulse T_C = 25^oC
Curves must be derated
linearly with increase
in temperature
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 18. Reverse Recovery Current
20
T_C = 25^oC
T_C = 175^oC
15
di_F/dt = 200A/μs
10
di_F/dt = 100A/μs
di_F/dt = 200A/μs
5
di_F/dt = 100A/μs
0
5
10
15
20
25
30
Forward Current, I_F [A]
©2013 Fairchild Semiconductor Corporation
6
FGH15T120SMD Rev. C1
www.fairchildsemi.com