FGH15T120SMD Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 1200 V, 15 A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
60
T_C = 25^oC
20V
48
15V
12V
36
10V
24
12
V_GE = 8V
0
0.0
2.0
4.0
6.0
8.0
10.0
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
60
Common Emitter
V_GE = 15V
48 _{T = 25 C} ^o
C
--------
T_C = 175^oC
36
24
12
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. V_GE
20
15
15A
10
I_C=8A
Common Emitter
T_C = 25^oC
30A
5
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 2. Typical Output Characteristics
60
T_C = 175^oC
15V
12V
20V
48
36
10V
24
12
V_GE = 8V
0
0.0
2.0
4.0
6.0
8.0
10.0
Collector-Emitter Voltage, V_CE [V]
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0
Common Emitter
V_GE = 15 V
30 A
2.5
2.0
15 A
I_C = 8 A
1.5
1.0
25
50 75 100 125 150 175
Case Temperature, T_C [^oC]
Figure 6. Saturation Voltage vs. V_GE
20
16
15A
12
I_C=8A
8
Common Emitter
T_C = 175^oC
30A
4
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
©2013 Fairchild Semiconductor Corporation
4
FGH15T120SMD Rev. C1
www.fairchildsemi.com