FGH15T120SMD Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 1200 V, 15 A Field Stop Trench IGBT

September 2013
FGH15T120SMD
1200 V, 15 A Field Stop Trench IGBT
Features
• FS Trench Technology, Positive Temperature Coefficient
• High Speed Switching
• Low Saturation Voltage: V_CE(sat) =1.8 V @ I_C = 15 A
• 100% of The Parts Tested for I_LM(1)
• High Input Impedance
• RoHS Compliant
Applications
• Solar Inverter, Welder, UPS & PFC Applications.
General Description
Using innovative field stop trench IGBT technology, Fairchild’s
new series of field stop trench IGBTs offer the optimum
performance for hard switching application such as solar
inverter, UPS, welder and PFC applications.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Description
V_CES
V_GES
I_C
I_LM (1)
I_CM (2)
I_F
I_FM
P_D
T_J
T_stg
T_L
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Clamped Inductive Load Current
Pulsed Collector Current
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
Diode Continuous Forward Current
Diode Continuous Forward Current
@ T_C = 25^oC
@ T_C = 100^oC
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(Diode)
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1. Vcc = 600 V,V_GE = 15 V, I_C = 60 A, R_G =34 Ω , Inductive Load
2. Limited by Tjmax
©2013 Fairchild Semiconductor Corporation
1
FGH15T120SMD Rev. C1
C
G
E
Ratings
1200
±25
±30
30
15
60
60
30
15
100
333
167
-55 to +175
-55 to +175
300
Typ.
--
--
--
Max.
0.45
2.0
40
Unit
V
V
V
A
A
A
A
A
A
A
W
W
o_C
o_C
o_C
Unit
o_C/W
o_C/W
o_C/W
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