FGA30N120FTD Datasheet, PDF (7/9 Pages) Fairchild Semiconductor – 1200V, 30A Trench IGBT

Typical Performance Characteristics
Figure 19. Reverse Current
50
Figure 20. Stored Charge
20
18
40
200A/µs
16
200A/µs
14
30
di/dt = 100A/µs
12
di/dt = 100A/µs
10
8
20
10
20
30
40
Forward Current, I_F [A]
6
10
20
30
40
Forward Current, I_F [A]
Figure 21. Reverse Recovery Time
1000
800
di/dt = 100A/µs
200A/µs
600
400
10
20
30
40
Forward Current, I_F [A]
Figure 22. Transient Thermal Impedance of IGBT
P_DM
t₁
t₂
FGA30N120FTD Rev. A
7
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