FGA30N120FTD Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 1200V, 30A Trench IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180
T_C = 25^oC
20V
150
17V
15V
120
12V
90
60
10V
9V
30
V_GE = 8V
0
0
2
4
6
8
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
120
Common Emitter
100
V_GE = 15V
T_C = 25^oC
80 ^{TC = 125oC}
60
40
20
0
0
2
4
6
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0
Common Emitter
V_GE = 15V
2.5
60A
2.0
30A
1.5
I_C = 10A
1.0
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
Figure 2. Typical Output Characteristics
180
T_C = 125^oC
20V
150
17V
15V
120
90
12V
60
10V
30
9V
V_GE = 8V
0
0
2
4
6
8
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
120
Common Emitter
V_CE = 20V
100 _{TC = 25}o_C
T_C = 125^oC
80
60
40
20
0
0
5
10
15
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
4
60A
30A
I_C = 15A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGH30N120FTD Rev. A
4
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