FGA30N120FTD Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 1200V, 30A Trench IGBT

Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
1000
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
t_r
100
Figure 14. Turn-off Characteristics vs.
Collector Current
1200
1000
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
t_f
t_d(on)
t_d(off)
10
10
20
30
40
50
Collector Current, I_C [A]
100
10
20
30
40
50
Collector Current, I_C [A]
Figure 15. Switching Loss vs. Gate Resistance
10
E_off
Figure 16. Switching Loss vs. Collector Current
10
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
E_off
1
Common Emitter
V_CC = 600V, V_GE = 15V
E_on
I_C = 30A
T_C = 25^oC
T_C = 125^oC
0.1
0
20
40
60
80
100
Gate Resistance, R_G [Ω]
1
E_on
0.1
10
20
30
40
50
Collector Current, I_C [A]
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
100
100
10
Safe Operating Area
V_GE = 15V, T_C = 125^oC
1
1
10
100
1000 2000
Collector-Emitter Voltage, V_CE [V]
10
1
0.1
0.0
T_J = 125^oC
T_J = 25^oC
T_C = 25^oC
T_C = 125^oC
0.5
1.0
1.5
Forward Voltage, V_F [V]
FGH30N120FTD Rev. A
6
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