FGA30N120FTD Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 1200V, 30A Trench IGBT

Electrical Characteristics of the Diode T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_FM
Diode Forward Voltage
I_F = 30A
T_C = 25^oC
T_C = 125^oC
t_rr
I_rr
Diode Reverse Recovery Time
I_F =30A,
Diode Peak Reverse Recovery Current ^{di/dt = 200A/µs}
T_C = 25^oC
T_C = 125^oC
T_C = 25^oC
T_C = 125^oC
Q_rr
Diode Reverse Recovery Charge
T_C = 25^oC
T_C = 125^oC
Min.
-
-
-
-
-
-
-
-
Typ.
1.3
1.3
730
775
43
47
5.9
18.2
Max
1.7
-
-
-
-
-
-
-
Units
V
ns
A
µC
FGA30N120FTD Rev. A
3
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