FGA30N120FTD Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – 1200V, 30A Trench IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125^oC
16
12
8
4
60A
30A
I_C = 15A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
T_C = 25^oC
12
V_CC = 200V
9
600V
400V
6
3
0
0
50
100
150
200
250
Gate Charge, Q_g [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
500
100
t_r
10
0
t_d(on)
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 30A
T_C = 25^oC
T_C = 125^oC
20
40
60
80
100
Gate Resistance, R_G [Ω]
Figure 8. Capacitance Characteristics
8000
6000
Common Emitter
C_ies
V_GE = 0V, f = 1MHz
T_C = 25^oC
4000
2000
C_oes
C_res
0
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 10. SOA Characteristics
200
100
10µs
100µs
10
1ms
10 ms
DC
1
*Notes:
0.1
1. T_C = 25^oC
2. T_J = 150^oC
3. Single Pulse
0.01
1
10
100
1000 3000
Collector-Emitter Voltage, V_CE [V]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
2000
1000
t_d(off)
100
50
0
t_f
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 30A
T_C = 25^oC
T_C = 125^oC
20
40
60
80
100
Gate Resistance, R_G [Ω]
FGH30N120FTD Rev. A
5
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