FGA120N30D Datasheet, PDF (7/9 Pages) Fairchild Semiconductor – 300V PDP IGBT

Typical Performance Characteristics (Continued)
Figure 18. Transient Thermal Impedance of IGBT
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
1E-3
1E-5
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
1
10
Figure 19. Forward Characteristics
100
10
T = 125oC
J
T = 25^oC
J
1
0.1
0.0
T = 25oC
C
T = 125oC
C
0.5
1.0
1.5
2.0
2.5
Forward Voltage , V [V]
F
Figure 20. Typical Reverse Recovery
Current
5
4
3
2
1
0
100
I = 10A
F
T = 25oC
C
500
di/dt [A/µs]
Figure 21. Typical Reverse Recovery Time
36
I = 10A
F
Tc = 25^oC
32
28
24
100
500
di/dt [A/µs]
7
FGA120N30D Rev. A
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