FGA120N30D Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 300V PDP IGBT

June 2006
FGA120N30D
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: V_CE(sat), Typ = 1.1V@ I_C = 25A
• High Input Impedance
Description
Employing Unified IGBT Technology, FGA120N30D provides
low conduction and switching loss. FGA120N30D offers the
optimum solution for PDP applications where low condution loss
is essential.
C
GCE
TO-3P
Absolute Maximum Ratings _{TC = 25°C unless otherwise noted}
Symbol
Description
V_CES
V_GES
I_C
I_CM
I_F
I_FM
P_D
T_J
T_stg
T_L
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Diode Maximum Forward Current
@ T_C = 25°C
@ T_C = 25°C
@ T_C = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25°C
@ T_C = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(DIODE)
R_θJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
G
E
FGA120N30D
300
± 30
120
300
10
40
290
116
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.43
1.56
40
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
FGA120N30D Rev. A
www.fairchildsemi.com