FGA120N30D Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 300V PDP IGBT

Typical Performance Characteristics (Continued)
Figure 13. Turn-On Characteristics vs.
Collector Current
Figure 14.Turn-Off Characteristics vs.
Collector Current
1000
Com m on Em itter
V = 200V, V = 15V
CC
GE
R = 8.7Ω
G
T = 25oC
C
T = 125oC
C
100
tr
td(on)
10
0
20
40
60
80
100
120
Collector Current, I [A]
C
1000
100
10
0
tf
td(off)
Com m on Em itter
V = 200V,V = 15V
CC
GE
R =8.7Ω
G
T = 25oC
C
T = 125oC
C
20
40
60
80
100
120
Collector Current, I [A]
C
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs.
Collector Current
Com m on Em itter
V = 200V, V = 15V
CC
GE
I =25A
D
T = 25oC
C
T = 125oC
C
1
Eoff
0.1
0
Eon
10
20
30
40
50
G ate Resistance, R [Ω ]
G
Com m on Em itter
V = 200V,V = 15V
CC
GE
10
R = 5Ω
G
T = 25^oC
C
T = 125^oC
C
1
Eoff
Eon
0.1
0
20
40
60
80
100
120
Collector Current, I [A]
C
Figure 17. Turn-Off SOA Figure
1000
Safe Operating Area
V = 20V, T = 100^oC
GE
C
100
10
1
10
100
Collector-Emitter Voltage, V [V]
CE
1000
6
FGA120N30D Rev. A
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