English
Language : 

FGA120N30D Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 300V PDP IGBT
◁
Package Marking and Ordering Information
Device Marking
FGA120N30D
Device
FGA120N30D
Package
TO-3P
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
∆BVCES/
∆TJ
ICES
IGES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250µA
VGE = 0V, IC = 250µA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250uA, VCE = VGE
IC = 25A, VGE = 15V
IC = 120A, VGE = 15V
IC = 120A, VGE = 15V,
TC = 125°C
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
300
--
--
V
--
0.6
--
V/°C
--
--
100
µA
--
--
± 250
nA
2.5
4.0
5.0
V
--
1.1
1.4
V
--
1.9
--
V
--
2.0
--
V
--
2310
-
pF
--
360
-
pF
--
100
-
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 200V, IC = 25A,
RG = 8.7Ω, VGE = 15V,
Resistive Load, TC = 25°C
VCC = 200V, IC = 25A,
RG = 8.7Ω, VGE = 15V,
Resistive Load, TC = 125°C
VCE = 200V, IC = 25A,
VGE = 15V
--
30
--
ns
--
270
--
ns
--
100
--
ns
--
130
300
ns
--
0.17
--
mJ
--
0.56
--
mJ
--
0.73
--
mJ
--
30
--
ns
--
280
--
ns
--
105
--
ns
--
180
--
ns
--
0.18
--
mJ
--
0.9
--
mJ
--
1.08
--
mJ
--
120
180
nC
--
15
22
nC
--
60
90
nC
2
FGA120N30D Rev. A
www.fairchildsemi.com
 ▷