FGA120N30D Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – 300V PDP IGBT

Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. V_GE
Figure 8. Capacitance Charaacteristics
6
C o m m o n E m itte r
T = 125oC
C
5
4
3
120A
2
50A
25A
1
1 2 .5 A
0
4
8
12
16
20
G a te - E m itte r V o lta g e , V [V ]
GE
5000
4000
3000
2000
1000
0
0.1
C ie s
Coes
C re s
Comm on Emitter
V = 0V, f = 1MHz
GE
T = 25oC
C
1
10
30
Collector-Em itter Voltage, V [V]
CE
Figure 9. Gate Charge Characteristics
Figure 10. SOA Characteristics
14 ^{Com m on Emitter}
R = 8Ω
L
T = 25^oC
12
C
10
Vcc = 200V
8
6
4
2
0
0
30
60
90
120
150
Gate Charge, Q [nC]
g
Figure 11. Turn-On Characteristics vs. Gate
Resistance
1000
tr
100
td(on)
10
0
10
Com m on Em itter
V = 200V, V = 15V
CC
GE
I = 25A
C
T = 25oC
C
T = 125oC
C
20
30
40
50
Gate Resistance, R [Ω ]
G
1000
Ic MAX (Pulsed)
Ic M AX (Continuous)
100
DC Operation
10
50µs
100µs
1ms
1 ^{Single Nonrepetitive}
Pulse Tc = 25^oC
Curves must be derated
linearly with increase
in temperature
0.1
0.1
1
10
100
Collector - Em itter Voltage, V [V]
CE
1000
Figure 12. Turn-Off Characteristics vs. Gate
Resistance
1000
td(off)
100
10
0
tf
Com m on Em itter
V = 200V, V = 15V
CC
GE
I = 25A
C
T = 25^oC
C
T = 125^oC
C
10
20
30
40
50
Gate Resistance, R [Ω]
G
5
FGA120N30D Rev. A
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