FGD3N60LSD_06 Datasheet, PDF (6/8 Pages) Fairchild Semiconductor – IGBT

Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Common Emitter
Vcc = 480 V, V = 10V
GE
R = 470Ω
G
T = 25°C
C
T = 125°C
C
1000
Eoff
Figure 14. Forward Characteristics
100
Tc = 25°C
Tc = 100°C
10
1
Eon
100
2
3
4
Collector Current, I [A]
C
Figure 15. Forward Voltage Drop Vs Tj
0.1
0
1
2
3
4
Forward Voltage Drop, V [V]
F
Figure 16. SOA Characteristics
2.8
2.4
2.0
1.6
1.2
25
I =6 A
F
100
Ic MAX (Pulsed)
10
Ic MAX (Continuous)
1
50µs
100µs
1ms
DC Operation
I =3 A
F
0.1 ^{Single Nonrepetitive}
Pulse Tc = 25°C
I =1.5 A
F
Curves must be derated
linearly with increase
in temperature
0.01
50
75
100
125
0.1
1
10
100
1000
Junction Temperature, Tj [°C]
Collector - Emitter Voltage, V [V]
CE
Figure 17. Transient Thermal Impedance of IGBT
10
0.5
1
0.2
0.1
0.05
0.02
0.1
0.01
single pulse
0.01
1E-5
1 E -4
1 E -3
0.01
0.1
R ectangular P ulse D uration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
1
10
FGD3N60LSD Rev. B
6
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