FGD3N60LSD_06 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – IGBT

FGD3N60LSD
IGBT
Features
• High Current Capability
• Very Low Saturation Voltage : V_CE(sat) = 1.2 V @ I_C = 3A
• High Input Impedance
Applications
• HID Lamp Applications
• Piezo Fuel Injection Applications
September 2006
tm
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide
very low conduction losses. The device is designed for applica-
tions where very low On-Voltage Drop is a required feature.
C
C
G E ^D-PAK
G
E
Absolute Maximum Ratings
Symbol
Description
V_CES
V_GES
I_C
I_{CM (1)}
IF
I FM
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continous Forward Current
Diode Maximum Forward Current
@ T_C = 25°C
@ T_C = 100°C
(1)
@ T_C = 100°C
P_D
Maximum Power Dissipation
Derating Factor
@ T_C = 25°C
T_J
Operating Junction Temperature
T_stg
Storage Temperature Range
T_L
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
FGD3N60LSD
600
± 25
6
3
25
3
25
40
0.32
-55 to +150
-55 to +150
250
Symbol
Parameter
R_{θJC (IGBT)} Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient (PCB Mount) ₍₂₎
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Typ.
--
--
Max.
3.1
100
Units
V
V
A
A
A
A
A
W
W/°C
°C
°C
°C
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
FGD3N60LSD Rev. B
www.fairchildsemi.com