FGD3N60LSD_06 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
30
Common Emitter
T = 25°C
C
24
20V _15V
10V
18
V = 8V
GE
12
6
0
0
2
4
6
8
Collector-Emitter Voltage, V [V]
CE
Figure 3. Typical Output Characteristics
10
Common Emitter
V = 10V
GE
T = 25°C
8
C
T = 125°C
C
6
4
2
0
0.1
1
10
Collector-Emitter Voltage, V [V]
CE
Figure 5. Saturation Voltage vs. Case
3
Common Emitter
V = 10V
GE
2
I = 6A
C
I = 3A
C
1
I = 1.5A
C
0
0
30
60
90
120
150
Case Temperature, T [°C]
C
Figure 2. Typical Output Characteristics
30
Common Emitter
T = 125°C
C
24
20V
15V
18
10V
12
V = 8V
GE
6
0
0
2
4
6
8
Collector-Emitter Voltage, V [V]
CE
Figure 4. Transfer Characteristics
10
Common Emitter
V = 20V
CE
T = 25°C
8
C
T = 125°C
C
6
4
2
0
1
10
Gate-Emitter Voltage, V [V]
GE
Figure 6. Capacitance Characteristics
600
Common Emitter
V = 0V, f = 1MHz
GE
500
T = 25°C
C
400
Cies
300
Coes
200
Cres
100
0
1
10
Collector - Emitter Voltage, V [V]
CE
FGD3N60LSD Rev. B
4
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