English
Language : 

FGD3N60LSD_06 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – IGBT
◁
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 3A
TC = 25°C
TC = 100°C
trr
Diode Reverse Recovery Time
IF = 3A,
TC = 25°C
di/dt = 100A/us
VR = 200V
TC = 100°C
Irr
Diode Peak Reverse Recovery Current
TC = 25°C
TC = 100°C
Qrr
Diode Reverse Recovery Charge
TC = 25°C
TC = 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.5
1.55
234
--
2.64
--
309
--
Max.
1.9
--
--
--
--
--
--
--
Units
V
ns
A
nC
FGD3N60LSD Rev. B
3
www.fairchildsemi.com
 ▷