FGD3N60LSD_06 Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – IGBT

Typical Performance Characteristics (Continued)
Figure 7. Gate Charge
Figure 8. Turn-On Characteristics vs. Gate
Resistance
12
Common Emitter
R = 160Ω
L
10 Vcc = 480V
T = 25°C
C
8
1000
Com m on Em itter
V = 480V, V = 10V
CC
GE
I = 3A
C
T = 25°C
C
T = 125°C
C
6
100
Ton
4
Tr
2
0
0
2
4
6
8
10
12
Gate Charge, Q [nC]
g
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
10000
Common Emitter
V = 480V, V = 10V
CC
GE
I = 3A
C
T = 25°C
C
T = 125°C
C
Toff
1000
Tf
100
200
400
600 800 1000
Gate Resistance, R [Ω ]
G
Figure 11. Turn-On Characteristics vs.
Collector Current
10
200
400
600 800 1000
Gate R esistance, R [Ω ]
G
Figure 10. Switching Loss vs. Gate Resistance
10000
Eoff
1000
Eon
100
Com m on Em itter
V = 480V, V = 10V
CC
GE
I = 3A
C
T = 25°C
C
T = 125°C
C
10
200
400
600 800 1000
Gate Resistance, R [Ω]
G
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
Vcc = 480V, V = 10V
GE
R = 470Ω
G
100 T = 25°C
C
1000
Toff
T = 125°C
C
Ton
Tf
Tr
10
2
3
4
Collector Current, I [A]
C
100
2
Common Emitter
Vcc = 480 V, V = 10V
GE
R = 470Ω
G
T = 25°C
C
T = 125°C
C
3
4
Collector Current, I [A]
C
FGD3N60LSD Rev. B
5
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