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FGD3040G2 Datasheet, PDF (6/10 Pages) Fairchild Semiconductor – EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT
Typical Performance Curves (Continued)
12
ICE = 6.5A, VGE = 5V, RG = 1KΩ
10
Resistive tOFF
8
Inductive tOFF
6
4
2
Resistive tON
0
25
50
75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. Switching Time vs. Junction
Temperature
430
2000
1600
1200
CIES
f = 1MHz
VGE = 0V
800
400
CRES
COES
0
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. Capacitance vs. Collector to Emitter
Voltage
420 ICER = 10mA
410
400
390
TJ = 25oC
TJ = 175oC
TJ = -40oC
380
10
100
RG, SERIES GATE RESISTANCE (Ω)
1000
Figure 15. Break down Voltage vs. Series Gate Resistance
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.5
0.20
0.10
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION(s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
6000
10
@2012 Fairchild Semiconductor Corporation
6
FGD3040G2_F085 Rev.C1
www.fairchildsemi.com