FGD3040G2 Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT

Device Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
BV_CER Collector to Emitter Breakdown Voltage (I_C = 1mA)
BV_ECS Emitter to Collector Voltage - Reverse Battery Condition (I_C = 10mA)
E_SCIS25 Self Clamping Inductive Switching Energy (Note 1)
E_SCIS150 Self Clamping Inductive Switching Energy (Note 2)
I_C25
Collector Current Continuous, at V_GE = 5.0V, T_C = 25°C
I_C110 Collector Current Continuous, at V_GE = 5.0V, T_C = 110°C
V_GEM Gate to Emitter Voltage Continuous
P_D
Power Dissipation Total, at T_C = 25°C
Power Dissipation Derating, for T_C > 25^oC
T_J
Operating Junction Temperature Range
T_STG Storage Junction Temperature Range
T_L
Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
T_PKG Reflow soldering according to JESD020C
ESD
HBM-Electrostatic Discharge Voltage at100pF, 1500Ω
CDM-Electrostatic Discharge Voltage at 1Ω
Package Marking and Ordering Information
Device Marking
Device
FGD3040G2 FGD3040G2_F085
Package
TO252
Reel Size
330mm
Ratings
400
28
300
170
41
25.6
±10
150
1
-55 to +175
-55 to +175
300
260
4
2
Units
V
V
mJ
mJ
A
A
V
W
W/^oC
o_C
o_C
o_C
o_C
kV
kV
Tape Width
16mm
Quantity
2500 units
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BV_CER
BV_CES
BV_ECS
BV_GES
I_CER
I_ECS
R₁
R₂
I_CE = 2mA, V_GE = 0,
Collector to Emitter Breakdown Voltage R_GE = 1KΩ,
T_J = -40 to 150^oC
I_CE = 10mA, V_GE = 0V,
Collector to Emitter Breakdown Voltage R_GE = 0,
T_J = -40 to 150^oC
Emitter to Collector Breakdown Voltage
I_CE = -20mA, V_GE = 0V,
T_J = 25°C
Gate to Emitter Breakdown Voltage I_GES = ±2mA
Collector to Emitter Leakage Current ^{VCE = 250V, RGE = 1KΩ}
Emitter to Collector Leakage Current ^{VEC = 24V,}
Series Gate Resistance
Gate to Emitter Resistance
T_J = 25^oC
T_J = 150^oC
T_J = 25^oC
T_J = 150^oC
On State Characteristics
V_CE(SAT) Collector to Emitter Saturation Voltage
V_CE(SAT) Collector to Emitter Saturation Voltage
V_CE(SAT) Collector to Emitter Saturation Voltage
E_SCIS Self Clamped Inductive Switching
I_CE = 6A, V_GE = 4V,
I_CE = 10A, V_GE = 4.5V,
I_CE = 15A, V_GE = 4.5V,
L = 3.0 mHy,RG = 1KΩ,
VGE = 5V, (Note 1)
T_J = 25^oC
T_J = 150^oC
T_J = 150^oC
TJ = 25°C
370 400 430 V
390 420 450 V
28 -
-
V
±12 ±14 -
V
-
- 25 μA
-
-
1 mA
-
-
1
mA
-
- 40
- 120 - Ω
10K - 30K Ω
- 1.15 1.25 V
- 1.35 1.50 V
- 1.68 1.85 V
-
- 300 mJ
@2012 Fairchild Semiconductor Corporation
2
FGD3040G2_F085 Rev.C1
www.fairchildsemi.com