FGD3040G2 Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT

Typical Performance Curves ^(Continued)
30
V_GE = 8.0V
V_GE = 5.0V
V_GE = 4.5V
20
V_GE = 4.0V
V_GE = 3.7V
10
T_J = 175^oC
0
0
1
2
3
4
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
45
40
35
30
25
20
15
10
5
0
25
V_GE = 5.0V
50
75 100 125 150 175
T_C, CASE TEMPERATURE(^oC)
Figure 9. DC Collector Current vs. Case
Temperature
2.0
V_CE = V_GE
I_CE = 1mA
1.8
1.6
1.4
1.2
1.0
-50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE(^oC)
Figure 11. Threshold Voltage vs. Junction
Temperature
30
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
V_CE = 5V
20
10
T_J = 175^oC
T_J = 25^oC
T_J = -40^oC
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
10
I_CE = 10A, T_J = 25^oC
8
V_CE = 6V
6
V_CE = 12V
4
2
0
0
10
20
30
40
50
60
Q_g, GATE CHARGE(nC)
Figure 10. Gate Charge
10000
1000
V_ECS = 24V
100
10
V_CES = 300V
1
0.1
-50
V_CES = 250V
-25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (^oC)
Figure 12. Leakage Current vs. Junction
Temperature
@2012 Fairchild Semiconductor Corporation
5
FGD3040G2_F085 Rev.C1
www.fairchildsemi.com