FGD3040G2 Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT

Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Dynamic Characteristics
Q_G(ON) Gate Charge
V_GE(TH) Gate to Emitter Threshold Voltage
V_GEP Gate to Emitter Plateau Voltage
I_CE = 10A, V_CE = 12V,
V_GE = 5V
I_CE = 1mA, V_CE = V_GE,
V_CE = 12V, I_CE = 10A
T_J = 25^oC
T_J = 150^oC
- 21 - nC
1.3 1.7 2.2
V
0.75 1.2 1.8
- 2.8 -
V
Switching Characteristics
t_d(ON)R
t_rR
t_d(OFF)L
t_fL
Current Turn-On Delay Time-Resistive V_CE = 14V, R_L = 1Ω
Current Rise Time-Resistive
V_GE = 5V, R_G = 1KΩ
T_J = 25^oC,
Current Turn-Off Delay Time-Inductive V_CE = 300V, L = 1mH,
Current Fall Time-Inductive
V_GE = 5V, R_G = 1KΩ
I_CE = 6.5A, T_J = 25^oC,
- 0.9 4 μs
- 1.9 7 μs
- 4.8 15 μs
- 2.0 15 μs
Thermal Characteristics
R_θJC Thermal Resistance Junction to Case
-
-
1 ^oC/W
Notes:
1: Self
Tj=25^oC;
Clamping
L=3mHy,
Inductive Switching Energy (E_SCIS25) of
I_SCIS=14.2A,V_CC=100V during inductor
300 mJ is based on the test conditions
charging and V_CC=0V during the time
that starting
in clamp.
Tj=21: ^{S50eolfCC;laLm=3pminHgyI,nId}_S^u_C^c_IS^{ti=ve10S.8wAit,cVh}_Cⁱⁿ_C^{g=E10n0eVrgydu(ErinS}g^CISin¹d⁵u^{0)ctoofr1c7h0amrgJinigs}
based on the
and V_CC=0V
test conditions that starting
during the time in clamp.
@2012 Fairchild Semiconductor Corporation
3
FGD3040G2_F085 Rev.C1
www.fairchildsemi.com