FGD3040G2 Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – EcoSPARK®2 300mJ, 400V, N-Channel Ignition IGBT

Typical Performance Curves
100
R_G = 1KΩ, V_GE = 5V, V_CE = 100V
T_J = 25^oC
10
T_J = 150^oC
SCIS Curves valid for V_clamp Voltages of <430V
1
1
10
100
t_CLP, TIME IN CLAMP (μS)
1000
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
45
40
R_G = 1KΩ, V_GE = 5V, V_CE = 100V
35
30
25
20
15
T_J = 25^oC
10
5 ^TJ ^{= 150oC}
SCIS Curves valid for V_clamp Voltages of <430V
0
0
3
6
9
12
15
L, INDUCTANCE (mHy)
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
1.20
1.15
V_GE = 3.7V
V_GE = 4.0V
I_CE = 6A
1.10
1.05
V_GE = 8V
V_GE = 5V
V_GE = 4.5V
1.00
-75 -50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERTURE (^oC)
Figure 3. Collector to Emitter On-State Voltage
vs. Junction Temperature
1.50
1.45
I_CE = 10A
1.40
1.35
V_GE = 3.7V
V_GE = 4.0V
1.30
1.25
1.20
1.15
V_GE = 5V
V_GE = 8V
V_GE = 4.5V
1.10
-75 -50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERTURE (^oC)
Figure 4. Collector to Emitter On-State Voltage
vs. Junction Temperature
30
V_GE = 8.0V
V_GE = 5.0V
V_GE = 4.5V
20
V_GE = 4.0V
V_GE = 3.7V
30
V_GE = 8.0V
V_GE = 5.0V
V_GE = 4.5V
20
V_GE = 4.0V
V_GE = 3.7V
10
10
T_J = -40^oC
0
0
1
2
3
4
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
vs. Collector Current
T_J = 25^oC
0
0
1
2
3
4
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
vs. Collector Current
@2012 Fairchild Semiconductor Corporation
4
FGD3040G2_F085 Rev.C1
www.fairchildsemi.com