FGAF40N60UFD Datasheet, PDF (6/8 Pages) Fairchild Semiconductor – Ultrafast IGBT

T = 25℃
C
T = 100℃
100 ^C
10
100
V = 200V
R
I = 15A
F
T = 25℃
C
T = 100℃
C
10
1
0
1
2
3
Forward Voltage Drop, V
Fig 18. Forward Characteristics
800
V = 200V
R
I = 15A
F
T = 25℃
C
600 T = 100℃
C
400
200
0
200
400
di/dt [A/us]
Fig 20. Stored Charge
600 800 1000
1
200
400
600 800 1000
di/dt [A/us]
Fig 19. Reverse Recovery Current
120
V = 200V
R
I = 15A
F
100
T = 25℃
C
T = 100℃
C
80
60
40
20
200
400
600 800 1000
di/dt [A/us]
Fig 21. Reverse Recovery Time
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A