FGAF40N60UFD Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – Ultrafast IGBT

3000
2500
2000
1500
1000
500
0
1
Cies
Coes
Cres
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
10
30
Collector-Emitter Voltage, V (V)
CE
Fig 7. Capacitance Characteristics
1000
Common Emitter
Vcc=300V,V = ± 15V
GE
Ic=20A
Tc = 25℃
Tc = 125℃
Toff
100
Tf
20
1
Tf
10
100 200
Gate Resistance, R ( Ω )
G
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
200
100
Ton
10 _Tr
10
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
10Ω
T = 25℃
C
T = 125℃
C
15
20
25
30
35
40
Collector Current, Ic (A)
Fig 11. Turn-On Characteristics vs.
Collector Current
©2004 Fairchild Semiconductor Corporation
300
Common Emitter
Vcc=300V,V = ± 15V
GE
Ic=20A
Tc = 25℃
Ton
100 Tc = 125℃ - - - -
Tr
10
1
10
Gate Resistance, R ( Ω )
G
100 200
Fig 8. Turn-On Characteristics vs.
Gate Resistance
2000
Common Emitter
1000
Vcc=300V,V =± 15V
GE
Ic=20A
Tc = 25℃
Tc = 125℃
Eon
Eoff
100
50
1
10
100 200
Gate Resistance, R ( Ω )
G
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
R = 10Ω
G
T = 25℃
C
T = 125℃
C
Toff
100
Toff
Tf
Tf
20
10
15
20
25
30
35
40
Collector Current, I [A]
C
Fig 12. Turn-Off Characteristics vs.
Collector Current
FGAF40N60UFD Rev. A