FGAF40N60UFD Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – Ultrafast IGBT

3000
1000
Eon
100 ^Eoff
Eoff
10
10
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
10Ω
T = 25℃
C
T = 125℃
C
15
20
25
30
35
40
Collector Current , Ic (A)
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R =15 Ω
L
12 (Tc=25 ℃)
9
6
300V
200V
Vcc=100V
3
0
0
30
60
90
120
Gate Charge, Qg (nC)
Fig 14. Gate Charge Characteristics
Ic MAX (Pulsed)
100
Ic MAX (Continuous)
10
50µs
100µs
1ms
DC Operation
1 _{Single Nonrepetitive}
Pulse Tc = 25^oC
Curves must be derated
linearly with increase
in temperature
0.1
1
10
100
Collector - Emitter Voltage, V [V]
CE
1000
Fig 15. SOA Characteristics
500
100
10
1
0.1
1
Safe Operating Area
V =20V, T =100^oC
GE
C
10
100
Collector-Emitter Voltage, V [V]
CE
1000
Fig 16. Turn-Off SOA Characteristics
1
0 .5
0 .2
0 .1
0 .1
0 .0 5
0 .0 2
0 .0 1
0 .0 1
single pulse
1E-5
1E-4
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
1E-3
0 .0 1
0 .1
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A