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FGAF40N60UFD Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – Ultrafast IGBT
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Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 20mA, VCE = VGE
IC = 20A, VGE = 15V
IC = 40A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 300 V, IC = 20A,
VGE = 15V
Measured 5mm from PKG
600
--
--
V
--
0.6
--
V/°C
--
--
250
uA
--
-- ± 100 nA
3.5
5.1
6.5
V
--
2.3 3.0
V
--
3.1
--
V
-- 1075 --
pF
--
170
--
pF
--
50
--
pF
--
15
--
ns
--
30
--
ns
--
65 130
ns
--
35 100
ns
--
470
--
uJ
--
130
--
uJ
--
600 1000 uJ
--
30
--
ns
--
37
--
ns
--
110 200
ns
--
80 250
ns
--
500
--
uJ
--
310
--
uJ
--
810 1200 uJ
--
77 150 nC
--
20
30
nC
--
25
40
nC
--
14
--
nH
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
Test Conditions
IF = 15A
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
IF = 15A,
di/dt = 200A/us
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.4
1.3
50
74
4.5
6.5
80
220
Max.
1.7
--
95
--
6.0
--
180
--
Units
V
ns
A
nC
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A
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