FGAF40N60UFD Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Ultrafast IGBT

160
Common Emitter
Tc = 25℃
120
80
40
20V
15V
12V
V = 10V
GE
0
0
2
4
6
8
Collector-Emitter Voltage,V (V)
CE
Fig 1. Typical Output Characteristics
4
Common Emitter
Vge=15V
3
2
1
40A
20A
Ic=10A
0
0
30
60
90
120
150
Case Temperature, T [℃]
C
Fig 3. Saturation Voltage vs.
Case Temperature at Variant Current Level
80
Common Emitter
70
V =15V
GE
Tc= 25℃
60 ^{Tc= 125℃}
50
40
30
20
10
0
0.5
1
10
Collector-Emitter Voltage, V (V)
CE
Fig 2. Typical Saturation Voltage
Characteristics
30
Vcc = 300V
Load Current : peak of square wave
25
20
15
10
5 _{Duty cycle : 50%}
Tc = 100℃
Powe Dissipation = 24W
0
0.1
1
10
100
Frequency [kHz]
1000
Fig 4. Load Current vs. Frequency
20
Common Emitter
T = 25℃
C
16
12
8
40A
4
20A
I = 10A
C
0
0
4
8
12
16
20
Gate - Emitter Voltage, V [V]
GE
Fig 5. Saturation Voltage vs. V_GE
©2004 Fairchild Semiconductor Corporation
20
Common Emitter
T = 125℃
C
16
12
8
40A
4
20A
Ic=10A
0
0
4
8
12
16
20
Gate - Emitter Voltage, V [V]
GE
Fig 6. Saturation Voltage vs. V_GE
FGAF40N60UFD Rev. A