J111 Datasheet, PDF (5/5 Pages) NXP Semiconductors – N-channel silicon field-effect transistors

Typical Characteristics (continued)
Switching Turn-On Time
vs Gate-Source Voltage
25
t _{r (ON)}
20
V _DD = 3.0V
t _r APPROX. I _D INDEPENDENT
V_GS(off) = 3.0V
15
T _A = 25°C
10
2.5 mA
- 6.0V
5
t _{d (ON)}
I _D = 6.6 mA
V _GS = -12V
0
0
-2
-4
-6
-8
-10
V _GS(off) - GATE-SOURCE CUTOFF VOLTAGE (V)
N-Channel Switch
(continued)
Switching Turn-Off Time
vs Drain Current
100
80 ^{VGS(off)= -2.2V}
- 4.0V
60 - 7.5V
t _(off)
T _A = 25°C
V_DD = 3.0V
V_GS = -12V
t _d(off) DEVICE
40
V _GS(off) INDEPENDENT
20
t _d(off)
0
0
2
4
6
8
10
I _D - DRAIN CURRENT (mA)