J111 Datasheet, PDF (1/5 Pages) NXP Semiconductors – N-channel silicon field-effect transistors

Discrete POWER & Signal
Technologies
J111
J112
J113
MMBFJ111
MMBFJ112
MMBFJ113
G
G
SD
TO-92
D
SOT-23 S
Mark: 6P / 6R / 6S
N-Channel Switch
This device is designed for low level analog switching, sample
and hold circuits and chopper stabilized amplifiers. Sourced
from Process 51.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
V_DG
VGS
I_GF
T_J ,T_stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
35
- 35
50
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
Rθ_JA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
J111- J113
350
2.8
125
*MMBFJ111
225
1.8
357
556
Units
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
©1997 Fairchild Semiconductor Corporation