J111 Datasheet, PDF (2/5 Pages) NXP Semiconductors – N-channel silicon field-effect transistors

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
N-Channel Switch
(continued)
Min Max Units
OFF CHARACTERISTICS
V_(BR)GSS
Gate-Source Breakdown Voltage
IGSS
Gate Reverse Current
V_GS(off)
Gate-Source Cutoff Voltage
ID(off)
Gate-Source Cutoff Voltage
IG = - 1.0 µA, VDS = 0
- 35
V
VGS = - 15 V, VDS = 0
- 1.0
nA
V_DS = 5.0 V, I_D = 1.0 µA
J111 - 3.0
- 10
V
J112 - 1.0 - 5.0
V
J113 - 0.5 - 3.0
V
VDS = 5.0 V, VGS = - 10 V
1.0
nA
ON CHARACTERISTICS
I_DSS
Zero-Gate Voltage Drain Current*
r_DS(on)
Drain-Source On Resistance
V_DS = 15 V, I_GS = 0
V_DS ≤ 0.1 V, V_GS = 0
J111
20
mA
J112
5.0
mA
J113
2.0
mA
J111
30
Ω
J112
J113
50
Ω
100
Ω
SMALL-SIGNAL CHARACTERISTICS
C_dg(on)
C_sg(on)
Cdg(off)
C_sg(off)
Drain Gate & Source Gate On
Capacitance
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 3.0%
V_DS = 0, V_GS = 0, f = 1.0 MHz
V_DS = 0, V_GS = - 10 V, f = 1.0 MHz
VDS = 0, VGS = - 10 V, f = 1.0 MHz
28
pF
5.0
pF
5.0
pF
Typical Characteristics
Common Drain-Source
10
V _GS = 0 V
8
- 0.2 V
T_A = 25°C
TYP V_GS(off) = - 2.0 V
- 0.4 V
6
- 0.6 V
4
- 0.8 V
- 1.0 V
2
- 1.4 V
- 1.2 V
0
0
0.4
0.8
1.2
1.6
2
V_DS- DRAIN-SOURCE VOLTAGE (V)
Parameter Interactions
100
100
r _DS
50
50
20
g _fs
20
10
_^50.5
I _DSS
I DSS , g fs @ V DS = 15V,
V _GS = 0 PULSED
r _DS @ 1.0 mA, V_GS = 0
V GS(off) @ V _DS = 15V,
I _D = 1.0 nA
_₁
_₂
_₅
V_{GS (OFF)} - GATE CUTOFF VOLTAGE (V)
10
_
5
10