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| J111 Datasheet, PDF (4/5 Pages) NXP Semiconductors – N-channel silicon field-effect transistors | |||
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Typical Characteristics (continued)
Transconductance
vs Drain Current
100
TA = 25°C
V DG = 15V
f = 1.0 kHz
10
V GS(off) = - 1.4V
V GS(off) = - 3.0V
1
0.1
1
10
I D - DRAIN CURRENT (mA)
Capacitance vs Voltage
100
f = 0.1 - 1.0 MHz
10
1
0
C rs (VDS = 0)
C is (VDS = 0)
C is (VDS = 20)
-4
-8
-12
-16
-20
V GS - GATE-SOURCE VOLTAGE (V)
N-Channel Switch
(continued)
Output Conductance
vs Drain Current
100
10
T A = 25°C
f = 1.0 kHz
V GS(off) = - 5.0V
V DG = 5.0V
10V
15V
20V
20V
5.0V
10V
15V
5.0V
10V
15V
20V
1
0.1
0.01
V GS(off) = - 2.0V
VGS(off) = - 0.85V
0.1
10
I D - DRAIN CURRENT (mA)
Noise Voltage vs Frequency
100
50
VDG = 15V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.21 @ f ⥠1.0 kHz
10
5
I D = 10 mA
I D = 1.0 mA
1
0.01
1
10
100
f - FREQUENCY (kHz)
Noise Voltage vs Current
100
V DG = 15V
f = 10 Hz
f = 100 Hz
f = 1.0 kHz
10
f = 10 kHz
f = 100 kHz
1
0.01
0.1
1
10
I D - DRAIN CURRENT (mA)
350
300
250
200
150
100
50
0
0
Power Dissipation vs
Ambient Temperature
TO-92
SOT-23
25
50
75
100 125 150
TEMPERATURE ( oC)
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