J111 Datasheet, PDF (3/5 Pages) NXP Semiconductors – N-channel silicon field-effect transistors

Typical Characteristics (continued)
Transfer Characteristics
40
V_GS(off) = - 3.0 V
- 55°C
25 °C
30
12 5°C
V_GS(off) = - 2.0 V
12 5°C
20
25 °C
- 55°C
10
V _DS = 15 V
0
0
-1
-2
-3
V_GS- GATE-SOURCE VOLTAGE (V)
Transfer Characteristics
30
V_GS(off) = - 3.0 V
- 55°C
25 °C
1 25°C
20
V_GS(off) = - 2.0 V
- 55°C
25 °C
12 5°C
10
V _DS = 15 V
0
0
-1
-2
-3
V_GS- GATE-SOURCE VOLTAGE (V)
On Resistance vs Drain Current
100
125°C V _GS(off)
TYP = - 2.0V
50 _25°C
125°C
- 55°C
V _GS(off)
TYP = - 7.0V
20 25°C _{r DS @ V GS = 0}
- 55°C
10
1
2
5
10 20
50 100
I _D - DRAIN CURRENT (mA)
N-Channel Switch
(continued)
Transfer Characteristics
16
V_GS(off) = - 1.6 V
- 55°C
12
25 °C
12 5°C
V _DS = 15 V
8
V_GS(off) = - 1.1 V
12 5°C
25 °C
4
- 55°C
0
0
-0.5
-1
-1.5
V_GS- GATE-SOURCE VOLTAGE (V)
Transfer Characteristics
30
V_GS(off) = - 1.6 V
- 55°C
20
25 °C
12 5°C
10
V _DS = 15 V
V_GS(off) = - 1.1 V
- 55°C
25 °C
12 5°C
0
0
-0.5
-1
-1.5
V_GS- GATE-SOURCE VOLTAGE (V)
Normalized Drain Resistance
vs Bias Voltage
100
50
V_GS(off) @ 5.0V, 10 µA
r _DS
20
r _DS =
1
-___V_^G_S___
10
V _GS(off)
5
2
1
0
0.2
0.4
0.6
0.8
1
VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V)