FQS4900 Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – Dual N & P-Channel, Logic Level MOSFET

Typical Characteristics : P-Channel (Continued)
10⁰
Top :
V
GS
-10.0 V
-8.0 V
-6.0 V
-5.0 V
-4.5 V
-4.0 V
-3.5 V
10^{-1 Bottom : -3.0 V}
10^-2
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
30
25
V_GS = - 5V
20
V = - 10V
GS
15
10
0.0
※ Note : T_J = 25℃
0.3
0.6
0.9
1.2
1.5
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
250
200
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
150
C
iss
100
C_oss
※ Notes :
1. V = 0 V
50
C
rss
GS
2. f = 1 MHz
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
10⁰
150℃
25℃
10^-1
0
-55℃
※ Notes :
1. V_DS = -25V
2. 250μ s Pulse Test
2
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.0
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = -60V
8
DS
V = -150V
DS
6
V_DS = -240V
4
2
※ Note : I = -0.3 A
D
0
0
1
2
3
4
5
6
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, August 2000