FQS4900 Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – Dual N & P-Channel, Logic Level MOSFET

Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
I_DSS
Zero Gate Voltage Drain Current
I_GSSF
I_GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V_GS = 0 V, I_D = 250 µA
V_GS = 0 V, I_D = -250 µA
V_DS = 60 V, V_GS = 0 V
V_DS = 48 V, T_C = 55°C
V_DS = -300 V, V_GS = 0 V
V_DS = -240 V, T_C = 55°C
V_GS = 20 V, V_DS = 0 V
V_GS = -20 V, V_DS = 0 V
On Characteristics
V_GS(th) Gate Threshold Voltage
R_DS(on) Static Drain-Source On-Resistance
g_FS
Forward Transconductance
V_DS = 4V, I_D = 20 mA
V_DS = 4V, I_D = -20 mA
V_GS = 10 V, I_D = 0.65 A
V_GS = 5 V, I_D = 0.65 A
V_GS = -10 V, I_D = -0.15 A
V_GS = -5 V, I_D = -0.15 A
V_DS = 10 V, I_D = 0.65 A
V_DS = -10 V, I_D = -0.15 A
Switching Characteristics
t_d(on)
Turn-On Delay Time
t_r
Turn-On Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
N-Channel
V_DD = 30 V, I_D = 1.3 A,
R_G = 25 Ω
P-Channel
V_DD = -150 V, I_D = -0.3 A,
R_G = 25 Ω
N-Channel
V_DS = 48 V, I_D = 1.3 A,
V_GS = 5 V
P-Channel
V_DS = -240 V, I_D = -0.3 A,
V_GS = -5 V
Type Min Typ Max Units
N-Ch 60 --
--
V
P-Ch -300 --
--
V
--
--
1
µA
N-Ch
--
--
10
µA
--
P-Ch
--
--
-1
µA
-- -10 µA
All
--
-- 100 nA
All
--
-- -100 nA
N-Ch 1.0 -- 1.95 V
P-Ch -1.0 -- -1.95 V
-- 0.39 0.55 Ω
N-Ch
-- 0.46 0.65 Ω
-- 11.2 15.5 Ω
P-CH
-- 11.4 16
Ω
N-CH -- 1.7 --
S
P-CH -- 0.6 --
S
N-Ch -- 5.7 21
ns
P-Ch -- 10 30
ns
N-Ch -- 21 50
ns
P-Ch -- 25 60
ns
N-Ch --
11 32
ns
P-Ch -- 35 80
ns
N-Ch -- 17 45
ns
P-Ch -- 47 105 ns
N-Ch -- 1.6 2.1 nC
P-Ch -- 3.6 4.7 nC
N-Ch -- 0.28 --
nC
P-Ch -- 0.42 --
nC
N-Ch -- 0.82 --
nC
P-Ch -- 2.1 --
nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch --
-- 1.3
A
P-Ch --
-- -0.3
A
V_SD
Drain-Source Diode Forward Voltage ^VGS ^{= 0 V, I}S ^{= 1.3 A}
V_GS = 0 V, I_S = -0.3 A
N-Ch --
-- 1.5
V
P-Ch --
-- -4.0
V
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
3. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
4. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, August 2000