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| FQS4900 Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – Dual N & P-Channel, Logic Level MOSFET | |||
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Typical Characteristics : N-Channel (Continued)
1.2
1.1
1.0
0.9
0.8
-100
â» Notes :
1. VGS = 0 V
2. ID = 250 μ A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
101
100
10-1
10-2
10-1
Operation in This Area
is Limited by R
DS(on)
1 ms
10 ms
100 ms
1s
10 s
DC
â» Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
100
101
102
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
â» Notes :
1. VGS = 10 V
2. ID = 0.65 A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs. Temperature
1.5
1.2
0.9
0.6
0.3
0.0
25
50
75
100
125
150
TC, Case Temperature [â]
Figure 10. Maximum Drain Current
vs. Case Temperature
D =0.5
101
0 .2
0 .1
0 .0 5
0 .0 2
100
0 .0 1
1 0 -1
1 0-4
â» N ote s :
1 . Z θ JC(t) = 6 2 .5 â /W M a x .
2 . D u ty F a c to r, D = t1/t2
3 . T JM - T C = P D M * Z θ JC(t)
s in g le pu ls e
PDM
t1
t2
1 0 -3
1 0 -2
1 0-1
100
101
102
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, August 2000
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