FQS4900 Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – Dual N & P-Channel, Logic Level MOSFET

Typical Characteristics : N-Channel
Top :
V
GS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
10⁰ Bottom : 3.0 V
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.0
V_GS = 10V
1.5
V = 5V
GS
1.0
0.5
※ Note : T = 25℃
J
0.0
0
2
4
6
8
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
160
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
120
※ Notes :
C
1. V = 0 V
GS
iss
2. f = 1 MHz
C_oss
80
40
C
rss
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
10⁰
150℃
25℃
10^-1
0
-55℃
※ Notes :
1. V_DS = 25V
2. 250μ s Pulse Test
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.2
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
8
6
4
2
0
0.0
V = 30V
DS
V = 48V
DS
※ Note : I = 1.3 A
D
0.5
1.0
1.5
2.0
2.5
3.0
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, August 2000