FGL60N170D Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – Electrical Characteristics of IGBT

16
Common Emitter
14
R
L
=
10Ω,
V
CC
=
600V
T = 25oC
C
12
10
8
6
4
2
0
0
25
50
75
100
125
150
Gate Charge, Qg [nC]
Fig 13. Gate Charge Characteristics
Ic MAX (Pulsed)
100
Ic MAX (Continuous)
10
50µs
100µs
1ms
DC Operation
1
Single Nonrepetitive
Pulse Tc = 25^oC
0.1 _{Curves must be derated}
linearly with increase
in temperature
0.01
0.1
1
10
100
1000
Collector - Emitter Voltage, V_CE [V]
Fig 14. Turn off SOA Characteristics
10
1
0.5
0.2
0.1 _0.1
0.05
0.02
0.01
0.01
single pulse
1E-3
1E-5
1E-4
1E-3
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
0.01
0.1
1
10
Rectangulasr Pulse Duration [sec]
Fig 15. Transient Thermal Impedance of IGBT
1.0
I_ECF = 60A
0.9 T = 25oC
C
0.8
0.7
0.6
t_rr
0.5
0.4
0.3
0.2
0.1
I_rr
0.0
0
40
80
120
160
di/dt [A/µs]
Fig 16. Typical Trr vs. di/dt
100
90
80
70
60
50
40
30
20
10
0
200
di/dt = 20A/µs
1.2
T = 25oC
C
I
rr
0.8
0.4
t_rr
0.0
10
20
30
40
50
I_ECF [A]
14
12
10
8
6
4
2
0
60
Fig 17. Typical Trr vs. Forward Current
©2001 Fairchild Semiconductor Corporation
100
10
T_C = 125^oC
1
0.1
0
1
2
3
Forward Voltage, V_F [V]
Fig 18. Typical Forward Voltage Drop vs.
Forward Current
FGL60N170D Rev. B