FGL60N170D Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – Electrical Characteristics of IGBT

1000
Common Emitter
V = 600V, V = ± 15V
CC
GE
I_C = 60A
T = 25oC
C
T = 125oC
C
100
tr
td(on)
10
10
100
Gate Resistance, R_G [Ω]
Fig 7. Turn on Characteristics vs.
Gate Resistance
10000
Common Emitter
V = 600V, V = ± 15V
CC
GE
I = 60A
C
T = 25oC
C
T = 125oC
C
Eoff
1000
Eon
10
100
Gate Resistance, R_G [Ω]
Fig 9. Switching Loss vs. Gate Resistance
1000
Common Emitter
V_CC = 600V, V_GE = ± 15V
I = 60A
C
T_C = 25^oC
T_C = 125^oC
tf
td(off)
100
10
100
Gate Resistance, R_G [Ω]
Fig 8. Turn off Characteristics vs.
Gate Resistance
1000
Common Emitter
V =±
GE
15V,
R
G
=
51Ω
T = 25oC
C
T = 125oC
C
100
tr
td(on)
10
20
30
40
50
60
70
80
90
Collector Current, I_C [A]
Fig 10. Turn on Characteristics vs.
Collector Current
1000
Common Emitter
V_GE = ± 15V, R_G = 51Ω
T_C = 25^oC
T = 125^oC
C
100
tf
td(off)
20
30
40
50
60
70
80
90
Collector Current, I_C [A]
Fig 11. Turn off Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
10000
Common Emitter
V =±
GE
15V,
R
G
=
51Ω
T = 25oC
C
T = 125oC
C
1000
Eoff
Eon
100
20
30
40
50
60
70
80
90
Collector Current, I_C [A]
Fig 12. Switching Loss vs. Collector Current
FGL60N170D Rev. B