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FGL60N170D Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – Electrical Characteristics of IGBT
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Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
VGE = 0V, IC = 3mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 60mA, VCE = VGE
IC = 60A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 30V, VGE = 0V,
f = 1MHz
VCC = 600 V, IC = 60A,
RG = 51Ω, VGE = 15V,
Resistive Load, TC = 25°C
VCE = 600 V, IC = 60A,
VGE = 15V
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
IR
Inatantaneous Reverse Current
CJ
Junction Capacitance
Test Conditions
IF = 15 A
IF = 60 A
IF = 60 A, di/dt = 20 A/uS
VRRM = 1700V
VCE = 10V, VGE = 0V, f = 1MHz
Min. Typ. Max. Units
1700
--
--
--
--
V
--
3.0
mA
-- ± 100 nA
3.5
5.0
7.5
V
-
5.0 6.0
V
-- 2500 --
pF
--
220
--
pF
--
80
--
pF
--
100 200
ns
--
350 700
ns
--
200 400
ns
--
100 300
ns
--
120 180 nC
--
20
30
nC
--
45
70
nC
Min.
--
--
--
--
--
Typ.
1.35
1.92
0.6
0.3
80
Max.
1.6
2.2
1.0
5
--
Units
V
us
uA
pF
©2001 Fairchild Semiconductor Corporation
FGL60N170D Rev. B
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