FGL60N170D Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Electrical Characteristics of IGBT

FGL60N170D
October 2001
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
FGL60N170D is designed for the Induction Heating
applications.
Features
• High Speed Switching
• Low Saturation Voltage : V_CE(sat) = 5.0 V @ I_C = 60A
• High Input Impedance
• Built-in Fast Recovery Diode
Application
Home Appliance, Induction Heater, IH JAR, Micro Wave Oven
C
G
GC E
TO-264
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
I_FM
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes from Case for 5 Seconds
@ T_C = 25°C
@ T_C = 100°C
@ T_C = 100°C
@ T_C = 25°C
@ T_C = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
E
FGL60N170D
1700
± 25
60
30
180
15
150
200
80
-55 to +150
-55 to +150
300
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(DIODE)
R_θA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.625
0.83
25
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
FGL60N170D Rev. B