FGL60N170D Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Electrical Characteristics of IGBT

100
Common Emitter
T = 25^oC
C
80
60
20V _15V
10V
8V
40
20
0
0
V_GE = 6V
2
4
6
8
Collector - Emitter Voltage, V_CE [V]
Fig 1. Typical Output Chacracteristics
7
Common Emitter
V_GE = 15V
6
5
4
3
I = 80A
C
I_C= 60A
I_C = 30A
2
25
50
75
100
125
150
Case Temperature, T_C [^oC]
Fig 3. Collector to Emitter Saturation
Voltage vs. Case Temperature
20
Common Emitter
T =25^oC
C
16
12
8
80A
60A
4
30A
0
0
4
8
12
16
20
Gate - Emitter Voltage, V_GE [V]
Fig 5. Saturation Voltage vs. V_GE
©2001 Fairchild Semiconductor Corporation
120
Common Emitter
V = 15V
100
GE
T = 25^oC
C
T = 125oC
C
80
60
40
20
0
0
2
4
6
8
10
Collector - Emitter Voltage, V_CE [V]
Fig 2. Typical Saturation Voltage Characteristics
5000
4000
3000
Cies
Common Emitter
V_GE=0V, f=1MHz
T_C=25^oC
2000
1000
0
1
Coes
Cres
10
Collector - Emitter Voltage, V_CE [V]
Fig 4. Typical Capacitance vs.
Collector to Emitter Voltage
20
Common Emitter
T =125^oC
C
16
12
8
80A
60A
4
30A
0
0
4
8
12
16
20
Gate - Emitter Voltage, V_GE [V]
Fig 6. Saturation Voltage vs. V_GE
FGL60N170D Rev. B