FGL60N100BNTDTU Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – 1000 V, 60 A NPT Trench IGBT

Typical Performance Characteristics
Figure 13. Reverse Recovery Characteristics Figure 14. Reverse Recovery Characteristics
vs. di/dt
vs. Forward Current
1.19
1.02
0.85
0.68
0.51
0.34
0.17
0.00
0
119
I_F=60A
T_C=25?
102
85
t_rr
68
51
34
I_rr
17
0
40
80
120
160
200
240
di/dt [A/us]
1.2
1.0
0.8
0.6
0.4
10
t_rr
I_rr
d i/d t= -2 0 A /u s
T_C=25?
12
10
8
6
20
30
40
50
Forward Current, I [A]
F
4
60
Figure 15. Reverse Current vs. Reverse Voltage Figure 16. Junction Capacitance
1000
250
100
T_C = 150℃
200
10
150
1
100
0.1
0.01
T_C= 25℃
50
T_C = 25 ℃
1E-3
0
300
600
900
Reverse Voltage, V_R [V]
0
0.1
1
10
100
Reverse Voltage, V_R [V]
Figure 17.Transient Thermal Impedance of IGBT
10
1
0 .1
0 .0 1
0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
P_DM
t₁
t₂
1 E -3
s in g le p u ls e
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
R e c ta n g u la r P u ls e D u r a tio n [s e c ]
10¹
©2000 Fairchild Semiconductor Corporation
5
FGL60N100BNTD Rev. C1
www.fairchildsemi.com