FGL60N100BNTDTU Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 1000 V, 60 A NPT Trench IGBT

FGL60N100BNTD
1000 V, 60 A NPT Trench IGBT
Features
• High Speed Switching
• Low Saturation Voltage: V_CE(sat) = 2.5 V @ I_C = 60 A
• High Input Impedance
• Built-in Fast Recovery Diode
Applications
• UPS, Welder
November 2013
General Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device offers the optimum perfor-
mance for hard switching application such as UPS, welder
applications.
GCE
TO-264 3L
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_JC(IGBT)
R_JC(Diode)
R_JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2000 Fairchild Semiconductor Corporation
1
FGL60N100BNTD Rev. C1
C
G
E
Ratings
1000
 25
60
42
120
15
180
72
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
W
W
o_C
o_C
o_C
Ratings
0.69
2.08
25
Unit
o_C/W
o_C/W
o_C/W
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