FGL60N100BNTDTU Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – 1000 V, 60 A NPT Trench IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
100
Common Emitter
20V
T_C = 25℃
15V
10V
8V
80
9V
60
40
20
0
0
7V
V = 6V
GE
1
2
3
4
5
Collector-Emitter Voltage, V_CE [V]
Figure 2. Typical Saturation Voltage Characteristics
90 _{Common Emitter}
80
V_GE = 15V
T = 25℃ ━━
C
70 ^TC ^{= 125℃ ------}
T = 25℃
C
60
T = 125℃
C
50
40
30
20
10
0
0
1
2
3
4
Collector-Emitter Voltage, V_CE [V]
Figure 3. Saturation Voltage vs. Case
Figure 4. Saturation Voltage vs. V_GE
Temperature at Variant Current Level
Common Emitter
V_GE=15V
3
80A
60A
2
1
-50
30A
I =10A
C
0
50
100
150
Case Temperature, T_C [℃]
10
8
6
4
2
0
4
Common Emitter
T = - 40 ^OC
C
30A
60A
80A
I_C=10A
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 5. Saturation Voltage vs. V_GE
10
Common Emitter
T = 25℃
C
8
6
30A
4
60A
80A
2
I = 10A
C
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
10
Common Emitter
T_C = 125℃
8
6
30A
60A
80A
4
2
I = 10A
C
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
©2000 Fairchild Semiconductor Corporation
3
FGL60N100BNTD Rev. C1
www.fairchildsemi.com