FGL60N100BNTDTU Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – 1000 V, 60 A NPT Trench IGBT

Typical Performance Characteristics
Figure 7. Capacitance Characteristics
10000
Cies
1000
Coes
100
Cres
Common Emitter
V_GE = 0V, f = 1MHz
T = 25℃
C
0
5
10
15
20
25
30
Collector-Emitter Voltage, V_CE [V]
Figure 9. Switching Characteristics vs.
Collector Current
1000
V_CC=600V, Rg=51Ω
V_GE=± 15V, T_C=25℃
Tdoff
Tf
Tr
100 _Tdon
10
20
30
40
50
60
Collector Current, I_C [A]
Figure 11. SOA Characteristics
I_C MAX. (Pulsed)
100 _{I MAX. (Continuous)}
C
10
DC Operation
50us
100us
1ms
1
0.1
1
Single Nonrepetitive Pulse
T_C = 25℃
Curve must be darated
linearly with increase
in temperature
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 8. Switching Loss vs. Gate Resistance
10000
1000
V_CC=600V, I_C=60A
V_GE=? 5V
T_C=25^oC
Tdoff
Tr
Tdon
Tf
100
10
0
50
100
150
200
Gate Resistance, R_G [? ]
Figure 10. Gate Charge Characteristics
20
Common Emitter
V_CC=600V, R_L=10 Ω
T_C=25 ℃
15
10
5
0
0
50
100
150
200
250
300
Gate Charge, Q_g [nC]
Figure 12. Forward Characteristics
100
T = 100 ℃
C
10
T_C = 25 ℃
1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
Forward Voltage, V_FM [V]
©2000 Fairchild Semiconductor Corporation
4
FGL60N100BNTD Rev. C1
www.fairchildsemi.com