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FGL60N100BNTDTU Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – 1000 V, 60 A NPT Trench IGBT
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Package Marking and Ordering Information
Part Number Top Mark Package Packing Method
FGL60N100BNTD FGL60N100BNTD TO-264
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0 V, IC = 1 mA
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 60 mA, VCE = VGE
IC =10 A, VGE = 15 V
IC = 60 A, VGE = 15 V,
1000
-
-
V
-
-
1
mA
-
-
±500
nA
4.0
5.0
7.0
V
-
1.5
1.8
V
-
2.5
2.9
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCE = 10 V, VGE = 0 V,
f = 1MHz
VCC = 600 V, IC = 60 A,
RG = 51 , VGE
Inductive Load,
= 15
TC =
V,
25oC
VCE
VGE
=
=
61050VV, ,TICC==2650oCA,
-
6000
-
pF
-
260
-
pF
-
200
-
pF
-
140
-
ns
-
320
-
ns
-
630
-
ns
-
130
-
ns
-
275
-
nC
-
45
-
nC
-
95
-
nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 15 A
IF = 60 A
trr
Diode Reverse Recovery Time IF = 60 A, di/dt = 20 A/us
IR
Instantaneous
VRRM = 1000 V
Min.
-
-
-
-
Typ.
1.2
1.8
1.2
0.05
Max
1.7
2.1
1.5
2.0
Unit
V
V
us
uA
©2000 Fairchild Semiconductor Corporation
2
FGL60N100BNTD Rev. C1
www.fairchildsemi.com
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