FGH50N3 Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – 300V, PT N-Channel IGBT

Typical Performance Curves T_J = 25°C unless otherwise noted (Continued)
250
DUTY CYCLE < 0.5%, V_CE = 10V
PULSE DURATION = 250µs
200
150
100
T_J = 25^oC
50
0
5
T_J = 125^oC
6
7
T_J = -55^oC
8
9
10
11
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 13. Transfer Characteristic
16
I_G(REF) = 1mA, R_L = 5Ω, T_J = 25^oC
14
12
V_CE = 300V
10
8
6
V_CE = 200V
4
V_CE = 100V
2
0
0
25 50 75 100 125 150 175 200
Q_G, GATE CHARGE (nC)
Figure 14. Gate Charge
1.2
R_G = 5Ω, L = 100µH, V_CE = 180V, V_GE = 15V
E_TOTAL = E_ON2 + E_OFF
1.0
0.8
I_CE = 60A
40
T_J = 125^oC, L = 100µH, V_CE = 180V, V_GE = 15V
E_TOTAL = E_ON2 + E_OFF
10
0.6
I_CE = 30A
0.4
I_CE = 15A
0.2
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 15. Total Switching Loss vs Case
Temperature
10
FREQUENCY = 1MHz
C_IES
1.0
C_OES
C_RES
0.1
0.05
0
10 20 30 40 50 60 70 80 90 100
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter
Voltage
I_CE = 60A
1
I_CE = 30A
I_CE = 15A
0.1
1
10
100
1000
R_G, GATE RESISTANCE (Ω)
Figure 16. Total Switching Loss vs Gate
Resistance
3.5
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs, T_J = 25^oC
3.0
I_CE = 60A
2.5
I_CE = 30A
2.0
I_CE = 15A
1.5
1.0
6 7 8 9 10 11 12 13 14 15 16
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A