FGH50N3 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 300V, PT N-Channel IGBT

Typical Performance Curves T_J = 25°C unless otherwise noted
200
V_GE = 15V
160
120
175
T_J = 150^oC, R_G = 5Ω, V_GE = 15V, L = 25µH
150
125
100
80
75
PACKAGE LIMITED
50
40
25
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 1. DC Collector Current vs Case
Temperature
0
0
50
100 150 200 250 300 350
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 2. Minimum Switching Safe Operating Area
500
T_J = 125^oC, R_G = 5Ω, L = 100µH, V_CE = 180V
400 _{TC = 75}o_C
300
V_GE = 15V
200
V_GE = 10V
30
V_CE = 180V, R_G = 5Ω, T_J = 125^oC
25
t_SC
20
15
800
700
I_SC
600
500
f_MAX1 = 0.05 / (t_d(OFF)I + t_d(ON)I)
100 ^fMAX2 ^{= (P}D ^{- P}C^{) / (E}ON2 ^{+ E}OFF⁾
P_C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R_ØJC = 0.27^oC/W, SEE NOTES
60
2
10
20
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 3. Operating Frequency vs Collector to
Emitter Current
60
DUTY CYCLE < 0.5%, V_GE = 10V
PULSE DURATION = 250µs
50
10
400
5
300
0
200
9
10 11 12 13 14 15 16
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 4. Short Circuit Withstand Time
60
DUTY CYCLE < 0.5%, V_GE = 15V
PULSE DURATION = 250µs
50
40
40
30
20
10
0
0.25
T_J = 150^oC
0.5 0.75 1.0
T_J = 25^oC
1.25
T_J = 125^oC
1.5 1.75 2.0
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
30
20
10
0
0.25
T_J = 150^oC
T_J = 25^oC
T_J = 125^oC
0.5
0.75
1.0
1.25
1.5
1.75
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
©2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A