FGH50N3 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 300V, PT N-Channel IGBT

July 2002
FGH50N3
300V, PT N-Channel IGBT
General Description
The FGH50N3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25^oC and 150^oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for medium frequency switch mode power
supplies.
Formerly Developmental Type TA49485
Features
• Low V_CE(SAT) . . . . . . . . . . . . . . . . . . . < 1.4V max
• Low E_OFF . . . . . . . . . . . . . . . . . . . . . . . . . < 200µJ
• SCWT (@ T_J = 125°C). . . . . . . . . . . . . . . . . > 8µs
• 300V Switching SOA Capability
• Positive V_CE(SAT) Temperature Coefficient above
50A
Package
TO-247
E
C
G
COLLECTOR
(FLANGE)
Symbol
C
G
E
Device Maximum Ratings T_C= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BV_CES
I_C25
I_C110
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T_C = 25°C
Collector Current Continuous, T_C = 110°C
300
V
75
A
75
A
I_CM
V_GES
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
240
A
±20
V
V_GEM
SSOA
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T_J = 150°C, Figure 2
±30
V
150A at 300V
E_AS
Single Pulse Avalanche Energy, I_CE = 30A, L = 1.78mH, V_DD = 50V
800
mJ
E_ARV
Single Pulse Reverse Avalanche Energy, I_EC = 30A, L = 1.78mH, V_DD = 50V
800
mJ
P_D
Power Dissipation Total T_C = 25°C
463
W
Power Dissipation Derating T_C > 25°C
3.7
W/°C
T_J
Operating Junction Temperature Range
-55 to 150
°C
T_STG
Storage Junction Temperature Range
-55 to 150
°C
t_SC
Short Circuit Withstand Time (Note 2)
8
µs
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
2. V_CE(PK) = 180V, T_J = 125°C, V_GE = 12Vdc, R_G = 5Ω
©2002 Fairchild Semiconductor Corporation
FGH50N3 Rev. A